Professor T. Paul Chow, Rensselaer Polytechnic Institute
Smart Power Devices and ICs with Wide and Extreme Bandgap Semiconductors
Abstract: Silicon has long been the dominant, often exclusive, semiconductor of choice for high voltage power devices and ICs. Over the last decade, power switching devices made of two wide bandgap (WBG) semiconductors, SiC and GaN, are impacting power electronics systems with their commercial availability and performance improvement, and hence less power loss and more energy efficient, over conventional silicon counterparts. In this talk, the present status of the research, development and/or commercialization, as well as cost-effectiveness of smart power devices and ICs using wide (SiC, GaN) and extreme (Ga2O3, diamond, AlN) bandgap semiconductors in advanced energy efficient electronics systems is presented. The technology obstacles and needs faced in these semiconductors as well as future trend in these power devices and ICs are also discussed.
Bio: Prof. T. Paul Chow received his Ph.D. in Electrical Engineering from RPI in 1982. He was a member of the technical staff at GE Corporate Research and Development from 1977 to 1989. Since 1989, he has been with RPI, where he is now professor of the Electrical, Computer and Systems Engineering Department. He has been working in the power semiconductor device area since 1982. His present research activities include high-voltage silicon, GaAs and wide bandgap (particularly SiC and GaN) semiconductor power devices and ICs. He has published over 150 papers in scientific journals, has contributed eight chapters in technical textbooks, and has procured over fifteen patents. He is a Fellow of the IEEE.
The lectures are free and everyone is welcome to attend.
ECE Distinguished Lectures Series website